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Thesis HV venti
“THE AMPLIFIER”

HV VENTI ORIGINATES FROM THE MERGING OF TWO LEGENDS: HR100 MUSICALITY AND HV SEDICI POWER BLEND TOGETHER TO GIVE LIFE TO THE AMPLIFIER PAR EXCELLENCE

Each product, even of high quality, is subject to constraints defined in the design phase, based on the needs of the market. The difference between Thesis HV venti and any other amplifier is very simple, we have not applied any constraints.

Thesis HV venti was born with a unique target, to be the best amplifier in the world!

It represents the maximum expression of the Audison R&D staff, who have pushed themselves beyond the absolute without any brakes, looking for the perfect sound parameteres.

HV venti is a stereo Dual Mono amplifier realized according to absolute Hi End parameters. Four power supplies, low feedback, high bias current: these are only some of the adopted solutions to obtain reference performances.

Through the developing of HV venti project many technological innovations were introduced in audio field. Dual Power lets you set up final stage in two output power configurations, Hi Current or Hi Power. This function permits total conformation to loudspeakers impedance and power handling specifications.

The preamplifier PCB is able to dissipate the heat generated by the active devices while keeping their working temperature at the same level and positively affecting sound. In order to let you admire the masterpiece Audison designers created the electronics is covered by a special tempered scratchproof glass and it is lighted by several white, red and blue leds positioned in strategic spots.

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Power Output
Load Imp. Hi-Current Hi-Power
4 Ohm 200 W x 2
800 W x 1
400 W x 2
1600 W x 1
2 Ohm 400 W x 2
1300 W x 1
800 W x 2
1 Ohm 350 W x 2
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Features
Hi-Res audio

De acuerdo con la definición de audio HiRes proporcionada por JAS (Japan Audio Society - jas-audio.or.jp), HV venti supera con creces el requisito analógico de banda de 40 kHz anterior, proporcionando un asombroso 5 ÷ 75k Hz (@ -3 dB, 2 VRMS, 4 Ω).

MOSFET-BJT HYBRID CONFIGURATION

Topología de etapa de potencia de salida única, FUNCIÓN IGBT discreta, realizada con un par complementario de Hitachi DMOS que maneja dos pares de BJT de potencia Sanken complementaria, cada uno con una corriente máxima de 30A y una disipación de 200W.

DUAL POWER FUNCTION

Una función revolucionaria que permite al usuario seleccionar la configuración de potencia de salida de los amplificadores y la clase operativa.

DUAL MONO CONSTRUCTION

Cuatro fuentes de alimentación Synchro-PWM permiten una respuesta de corriente transitoria muy rápida y crean una configuración Dual Mono.

JFET DIFFERENTIAL STAGES

Entradas de preamplificador diferencial JFET totalmente balanceadas con buffer de salida para la unidad de control.

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